1999. 5. 4 1/3 semiconductor technical data KDV149 revision no : 1 am radio band tuning application. features high capacitance ratio : c 1v /c 8v =19.5(typ.). high q : q=200(min.). small package. low voltage operation. : 1v 8v. maximum ratings (ta=25 1 ) 1 2 to-92m dim millimeters a b c d e f g h j k 1. anode 2. cathode 3.20 max 4.30 max 0.55 max 2.40 0.15 1.27 2.30 14.00 0.50 0.60 max 1.05 1.45 25 0.55 max l m n f a g j k d ee l n m c h 0.80 o 0.75 o b + _ + _ 12 electrical characteristics (ta=25 1 ) variable capacitance diode silicon epitaxial planar diode characteristic symbol rating unit reverse voltage v r 15 v junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =10 a 15 - - v reverse current i r v r =15v - - 50 na capacitance c 1v v r =1v, f=1mhz 435 - 540 pf c 8v v r =8v, f=1mhz 21 - 30 capacitance ratio c 1v /c 8v 16 19.5 22 figure of merit q v r =1v, f=1mhz 200 450 - c(max.)-c(min.) note) # 0.025(v r =1v~8v) c(min.)
1999. 5. 4 2/3 KDV149 revision no : 1 (1) this table is not selection goide, which means only to show the data. (2) the number on the vinyl package (on the label in the vinyl package) is to show the capacitance data at each voltage in a matched group. example : a - 1 - 2 - 3 - 3 (c 1v ) (c 1v /c 3v ) (c 1v /c 5v ) (c 1v /c 8v ) grade no. c 1v (pf) no. c 1v /c 3v no. c 1v /c 5v no. c 1v /c 8v a (162 grade) 1 435 450 1 2.30 2.42 1 5.50 6.52 1 16.0 18.5 2 445 460 2 2.38 2.52 2 6.48 7.52 2 18.0 20.0 3 2.48 2.62 3 7.48 8.50 3 19.5 22.0 4 2.58 2.72 5 2.68 2.82 6 2.78 2.92 7 2.88 3.02 8 2.98 3.12 9 3.08 3.20 b (270 grade) 3 455 470 0 2.20 2.32 1 5.50 6.52 1 16.0 18.5 4 465 480 1 2.28 2.42 2 6.48 7.52 2 18.0 20.0 5 475 490 2 2.38 2.52 3 7.48 8.50 3 19.5 22.0 3 2.48 2.62 4 2.58 2.72 5 2.68 2.82 6 2.78 2.92 7 2.88 3.02 8 2.98 3.12 9 3.08 3.20 c (162 grade) 6 485 500 1 2.20 2.32 1 5.50 6.52 1 16.0 18.5 7 495 510 2 2.28 2.42 2 6.48 7.52 2 18.0 20.0 3 2.38 2.52 3 7.48 8.50 3 19.5 22.0 4 2.48 2.62 5 2.58 2.72 6 2.68 2.82 7 2.78 2.92 8 2.88 3.02 9 2.98 3.10 d (162 grade) 8 505 525 1 2.10 2.22 1 5.50 6.52 1 16.0 18.5 9 520 540 2 2.18 2.32 2 6.48 7.52 2 18.0 20.0 3 2.28 2.42 3 7.48 8.50 3 19.5 22.0 4 2.38 2.52 5 2.48 2.62 6 2.58 2.72 7 2.68 2.82 8 2.78 2.92 9 2.88 3.00 test condition (f=1mhz, ta=25 1 )
1999. 5. 4 3/3 KDV149 revision no : 1 -6 -50 0.2 0 10 0 0 10 300 0 4 8 12 16 20 30 50 100 300 500 f=1mhz ta=25 c 4 8 12 16 20 -12 -11 10 -10 10 -9 10 ta=60 c ta=25 c ta=-25 c 246810 500 1k 3k 5k f=1mhz ta=25 c 246810 0.4 0.6 0.8 1.0 ta=25 c c= 3 0 pf c=10p f c=0 KDV149 -25 0 25 50 75 100 -4 -2 0 2 4 6 f=1mhz v =1.3 v r v =5v r r v =7v v =8v r variation of capacitance ambient temperature ta ( c) c(temp.)/c(25 c) - ta normalized tuning frequency f/f(max) reverse voltage v (v) r r max f/f - v reverse current i (pa) r reverse voltage v (v) r i - v c - v r reverse voltage v (v) capacitance c (pf) figure of merit q reverse voltage v (v) r q - v r rr r c(temp.)/c(25 c) (%)
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